Sputtering Recipes - UCSB Nanofab Wiki
Sputtering Recipes - UCSB Nanofab Wiki
Back to Vacuum Deposition Recipes. R1
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For a list of the current installed targets, please refer to the SignupMonkey Page.
Sputtering Process Tips and Recommendations
Common Ignition Problems
It's not uncommon to encounter a failure to ignite the plasma during the sputtering process. A frequent solution to this dilemma involves increasing the chamber pressure specifically for the ignition phase, and then lowering it to the desired process pressure during the PreClean and/or Deposition steps. For instance, you might set the ignition pressure to 10mTorr or 30mT, and then reduce it to around 3mTorr during actual deposition to help maintain plasma stability.
Materials Sputtering Parameters (Sputter 3)
The following recipes serve as initial guidelines sourced from data collected in the nanofabrication facility. It is advisable to conduct calibrations for precise depositions.
| Material | P(mT) | Power (W) | Substrate (W) | Temperature (C) | Ar | N2 | O2 | Height-Tilt (mm) | Rate (nm/min) | Stress (MPa) | Rs (uOhm-cm) | n @ 633nm | k @ 633nm |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Au | - | - | - | - | - | - | - | - | - | - | - | - | - |
Conversion of Height Settings for Legacy Recipes
Older recipes that utilized manual height measurements in millimeters need to be converted into the new programmatic settings measured in inches. The conversion values are as follows:
| Old (mm) | New (inches) | Typical Gun Tilt (mm) |
|---|---|---|
| 15 | - | - |
| 25 | 0.82 | 9 |
| 44 | 1.52 | 4 |
For more detailed interpolation data, you can refer to the provided plot.
Deposition Techniques for Fe and Co (Sputter 3)
Copper Deposition Strategies (Sputter 3)
Molybdenum Deposition Methods (Sputter 3)
Nickel and Tantalum Sputtering Techniques (Sputter 3)
Silicon Dioxide Sputtering Parameters (Sputter 3)
Silicon Nitride Sputtering Protocols (Sputter 3)
Titanium Sputtering Techniques (Sputter 3)
Consult the SignupMonkey page for information on the available targets.
Materials Sputtering Guidelines (Sputter 4)
The recipes featured below represent starting points derived from findings within the nanofabrication facility. For significant depositions, it is highly recommended to perform calibrations.
| Material | P(mT) | Power Source | Power (W) | Substrate (V) | Temperature (C) | Ar | N2 | O2 | Height-Tilt (mm) | Rate (nm/min) |
|---|
Gold Deposition Methods (Sputter 4)
Aluminum Deposition Techniques (Sputter 4)
Alumina Deposition Guidelines (Sputter 4)
- Rate: 5.134 nm/min
- Cauchy Refractive Index Parameters (derived from λ=190-nm, indicating good transparency through this range):
- A = 1.626
- B = 5.980E-3
- C = 1.622E-4
Platinum Sputtering Techniques (Sputter 4)
Ruthenium Sputtering Protocols (Sputter 4)
Titanium-Gold Layer Deposition Methods (Sputter 4)
Titanium Dioxide Sputtering Parameters (Sputter 4)
Titanium Tungsten Sputtering Strategies (Sputter 4)
Tungsten-Titanium Tungsten Deposition Techniques (Sputter 4)
The SignupMonkey page contains the current inventory of installed targets.
Contact us for inquiries related to sio2 sputtering. Our knowledgeable sales representatives can assist you in selecting the best options according to your specifications.
Materials Sputtering Data (Sputter 5)
The recipes below reflect starting configurations based on data from the nanofabrication lab. For critical depositions, it is advisable to carry out calibrations.
| Material | P(mT) | Power Source | Power (W) | Substrate (V) | Temperature (C) | Ar | N2 | O2 | Height-Tilt (mm) | Rate (nm/min) |
|---|
Silicon Dioxide Sputtering Strategies (Sputter 5)
Ion-Beam Assisted Deposition is utilized for creating high-density reactive sputtered dielectric film stacks, employing angled and rotating fixtures.
- Methodology for calibrating multi-layer optical films, such as those used in the development of Multi-layer DBR gratings and Anti-Reflection coatings.
Ion-Beam Deposition Process Control Plots - Comprehensive data visualizations of all process control metrics.
Silicon Dioxide Deposition (IBD)
Silicon Dioxide Thin Film Characteristics (IBD)
- Deposition Rate: ' 5.2 nm/min (users must conduct calibrations prior to critical deposition tasks)
- Hydrofluoric Acid Etch Rate: ~350 nm/min
- Measured Stress: ' -390MPa (compressive)
- Refractive Index: ' 1.494
- Cauchy Parameters (350-nm):
- A = 1.480
- B = 0.
- C = -3.e-5
Uniformity of SiO2 Depositions
Measured in June (Demis D. John)
Uniformity Statistics
| Thickness (nm) | Refractive Index (at 632nm) |
|---|---|
| Mean (Avg.), nm | 0.80 |
| Min | 0.09 |
| Max | 0.9 |
| Standard Deviation (nm) | 5.99 |
Credit: Demis D. John, -06-15. Data represents the measurements of SiO2 thickness and refractive index across a 6-inch wafer using ellipsometry.
Silicon Nitride Deposition (IBD)
Properties of Silicon Nitride Thin Films (IBD)
- Deposition Rate: ' 4.10 nm/min (users must perform prior calibrations for critical depositions)
- Hydrofluoric Acid Etch Rate: ~11nm/min
- Material Stress: ' -MPa (compressive)
- Refractive Index: ' 1.969
- Cauchy Parameters (350-nm):
- A = 2.000
- B = 0.
- C = 1.e-4
Tantalum Pentoxide Deposition (IBD)
Properties of Tantalum Pentoxide Thin Films (IBD)
- Ta2O5 depositions over 1 hour yield:
- Deposition Rate: ' 7.8 nm/min (users must calibrate before critical applications)
- Hydrofluoric Acid Etch Rate: 2 nm/min
- Measured Stress: ' -232MPa (compressive)
- Refractive Index: ' 2.172
- Cauchy Parameters (350-nm):
- A = 2.
- B = 0.
- C = -0.
Alumina Deposition (IBD)
- Standard Recipe for Alumina [IBD] - "1_Al2O3_dep"
- Process Control Data for Alumina [IBD]
Properties of Alumina Thin Films (IBD)
- Deposition Rate: ' 2.05nm/min (users must calibrate prior to important depositions)
- Hydrofluoric Acid Etch Rate: ' 167nm/min
- Measured Stress: ' -332MPa (compressive)
- Refractive Index: ' 1.656
- Cauchy Parameters (350-nm):
- A = To Be Added
- B =
- C =
- Absorption < ~350nm
Titanium Dioxide Deposition (IBD)
Properties of Titanium Dioxide Thin Films (IBD)
- Deposition Rate: ' 1.29 nm/min (users should calibrate before critical depositions)
- Hydrofluoric Acid Etch Rate: ~5.34nm/min
- Measured Stress: ' -445MPa (compressive)
- Refractive Index: ' 2.259
- Cauchy Parameters (350-nm):
- A = 2.435
- B = -4.e-4
- C = 0.
- Absorption < ~350nm wavelength
Silicon Oxide Nitride Deposition (IBD)
These initial characterizations are preliminary. An improvement in the recipes would be to increase the Assist O2 and N2 to a total of 60sccm, enhancing repeatability by avoiding the low-flow limits of the mass flow controllers. Data was provided by Demis D. John.
Standard Cleaning Procedures for IBD
Adjust your cleaning procedures in accordance with the following timings for "#_GridClean" steps (where "#" represents your group number):
- 5-min GridClean for depositions lasting 1 hour or less
- 10-min GridClean for depositions up to 2 hours
- Depositions should not exceed 2 hours; instead, divide your process into several segments of 2 hours with intervening cleans. Review the recipe "1_SiO2_Dep_Multi" for guidance.
Recommended Grid-Clean Procedure
Details to be announced.
Note: This Tool is Currently Disabled and is Non-operational. These recipes are maintained solely for historical and reference purposes.
Aluminum Deposition (Sputter 2)
AlNx Deposition (Sputter 2)
Gold Deposition (Sputter 2)
Titanium Dioxide Deposition (Sputter 2)
Concerns about Arcing When Sputtering SiO2
Recently, a customer raised a question regarding the continuous operation of an SiO2 Sputtering Target, specifically regarding issues of arcing. There will inevitably be some 're-deposition' on the sputtering target, whereby stray molecules that are dislodged from the target surface resettle onto it. However, using a non-magnetron planar diode cathode assembly along with an RF generator, this should not present a significant concern. The ions will impact the target surface randomly and not in specifically chosen areas. The RF generator is meant to produce a consistent and uniform plasma across the entire target surface, targeting both re-deposited and untouched areas of the SiO2 target in a random yet equal manner. Variations in film composition may occur, as the areas of the target that have experienced re-deposition may slightly differ in silicon richness compared to those areas that are oxygen-rich, depending on how much oxygen is added to the argon working gas. However, this should not compromise the sputtering process needed to maintain a steady and uniform plasma and its deposition.
If arcing occurs, check if material is accumulating in the space between the dark space shield and the target surface, which should be about 1-3mm. This space should always extend beyond the target surface by approximately 3mm. Ensure this area remains clean, potentially necessitating periodic sanding or abrasion of the components. Arcing indicates that the plasma is inadvertently grounding, which could be due to various reasons. Make sure that the reflected power on your RF generator remains at zero and confirm whether the RF generator operates at constant voltage, current, or power. Continuous monitoring of both current and voltage over time at the designated power levels is critical. Any changes in target impedance may necessitate adjustments in the power supply and tuning network to maintain balance within the plasma.
If further details are desired, please visit sputtering target materials.